? 2008 ixys corporation, all rights reserved ds100078(11/08) ixth260n055t2 trencht2 tm power mosfet n-channel enhancement mode avalanche rated symbol test conditions maximum ratings v dss t j = 25 c to 175 c55 v v dgr t j = 25 c to 175 c, r gs = 1m 55 v v gsm transient 20 v i d25 t c = 25 c 260 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 780 a i a t c = 25 c 100 a e as t c = 25 c 600 mj p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 55 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 150 a r ds(on) v gs = 10v, i d = 50a, notes 1, 2 3.3 m v dss = 55v i d25 = 260a r ds(on) 3.3m g = gate d = drain s = source tab = drain to-247 g d s (tab) features z international standard package z 175c operating temperature z high current handling capability z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z automotive - motor drives - 12v battery - abs systems z dc/dc converters and off-line ups z primary- side switch z high current switching applications preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixth260n055t2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 94 s c iss 10.8 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1460 pf c rss 215 pf t d(on) 20 ns t r 27 ns t d(off) 36 ns t f 24 ns q g(on) 140 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 52 nc q gd 32 nc r thjc 0.31 c/w r thch 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 260 a i sm repetitive, pulse width limited by t jm 1000 a v sd i f = 100a, v gs = 0v, note 1 1.3 v t rr 60 ns i rm 3.4 a q rm 102 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 2 (external) i f = 130a, v gs = 0v -di/dt = 100a/ s v r = 27v
? 2008 ixys corporation, all rights reserved ixth260n055t2 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7v 5v 6v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 15v 10v 9v 8v 7 v 5 v 6 v fig. 4. r ds(on) normalized to i d = 130a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 260a i d = 130a fig. 5. r ds(on) normalized to i d = 130a value vs. drain current 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 0 50 100 150 200 250 300 350 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 200 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. ixth260n055t2 ixys ref: t_260n055t2(v6)12-15-08-b fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 320 360 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120130140 q g - nanocoulombs v gs - volts v ds = 28v i d = 130a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 100s 10ms 100ms r ds( on ) limit dc external lead current limit
? 2008 ixys corporation, all rights reserved ixth260n055t2 fig. 14. resistive turn-on rise time vs. drain current 24 25 26 27 28 29 30 31 32 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds r g = 2 ? v gs = 10v v ds = 28v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 2 4 6 8 10 12 14 16 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 28v i d = 200a, 100a fig. 16. resistive turn-off switching times vs. junction temperature 15 20 25 30 35 40 45 50 55 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 20 25 30 35 40 45 50 55 60 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 28v i d = 200a, 100a fig. 17. resistive turn-off switching times vs. drain current 8 12 16 20 24 28 32 36 40 44 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 20 25 30 35 40 45 50 55 60 65 t d(off) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 10v v ds = 28v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? v gs = 10v v ds = 28v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 25 50 75 100 125 150 175 200 225 250 275 2 4 6 8 10 12 14 16 r g - ohms t f - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 240 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 28v i d = 100a, 200a
ixys reserves the right to change limits, test conditions, and dimensions. ixth260n055t2 ixys ref: t_260n055t2(v6)12-15-08-b fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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